发明名称 |
VERFAHREN ZUR HERSTELLUNG EINES SILIZIUM/INTEGRIERTE SCHALTUNG WAFERS |
摘要 |
A method for making integrated circuit wafers wherein the wafer has vias or other openings in the wafer which openings have a barrier/adhesion or other metal layer which is metallized to form the circuit comprising activating the metal layer and then sensitizing the metallic layer using a sensitizing displacement composition comprising preferably an alkaline palladium non-ammonia nitrogen (ethylene diamine) complex which is contacted with the wafer at a specially controlled pH. The wafer is activated using an activation solution which contains a complexing agent for any dissolved metal. The sensitizing solution also preferably contains a complexing agent for dissolved metal and preferably contains a second complexing agent such as EDTA to solubilize base metal contaminants. |
申请公布号 |
DE69624130(T2) |
申请公布日期 |
2003.09.11 |
申请号 |
DE1996624130T |
申请日期 |
1996.12.11 |
申请人 |
ENTHONE-OMI, INC. |
发明人 |
OBERLE, R. |
分类号 |
C23C18/26;C23C18/18;H01L21/288;H01L21/308;H01L21/768;(IPC1-7):B05D5/12;B05D1/18;B05D3/04;C23C18/16;C23C18/28 |
主分类号 |
C23C18/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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