| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve problems that gas is generated due to electric erosion reaction by developer and peeling of film is generated at a contact part in an organic insulation film patterning process for forming relief structure of a reflection film in an array process of a liquid crystal display. <P>SOLUTION: In etching in the case of forming a contact hole, the etching is performed while leaving an upper layer metal film of a wiring pattern. Over- etching is conventionally performed by stopping the etching by using an end monitor, however, the upper layer metal film 7 is etched at a part of a substrate due to dispersion of the etching in a lot surface and dispersion of the etching in a substrate surface. Then, quantity of the over-etching is fixed and the etching is performed while leaving the upper layer metal film by calculating and fixing etching time by film thickness of an insulation film and its etching rate. <P>COPYRIGHT: (C)2003,JPO |
