CRYSTALLIZATION METHOD FOR OXIDE SEMICONDUCTOR LAYER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, APPLYING THEREOF

摘要

The purpose of the present invention is to provide a method to crystallize an oxide semiconductor layer, a semiconductor device in which the method to crystallize the oxide semiconductor layer is applied, and a method to manufacture the semiconductor device capable of improving reliability of an element by improving a crystallization characteristic. According to the present invention, the method to manufacture the semiconductor device comprises the steps of: heating a substrate at 200 to 300°C and depositing indium (In)-gallium (Ga)-zinc (Zn) oxide on the substrate; and treating the deposited In-Ga-Zn oxide by heating and forming the crystallized oxide semiconductor layer in the whole thicknesses.