发明名称 SEMICONDUCTOR STRUCTURES AND DEVICES AND METHODS OF FORMING SEMICONDUCTOR STRUCTURES AND MAGNETIC MEMORY CELLS
摘要 A magnetic cell includes a magnetic region formed from a precursor magnetic material comprising a diffusive species and at least one other species. An amorphous region is proximate to the magnetic region and is formed from a precursor trap material comprising at least one attracter species having at least one trap site and a chemical affinity for the diffusive species. The diffusive species is transferred from the precursor magnetic material to the precursor trap material where it bonds to the at least one attracter species at the trap sites. The species of the enriched trap material may intermix such that the enriched trap material becomes or stays amorphous. The depleted magnetic material may then be crystallized through propagation from a neighboring crystalline material without interference from the amorphous, enriched trap material. This enables high tunnel magnetoresistance and high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.
申请公布号 US2016181513(A1) 申请公布日期 2016.06.23
申请号 US201615057909 申请日期 2016.03.01
申请人 Micron Technology, Inc. 发明人 Sandhu Gurtej S.;Pandey Sumeet C.
分类号 H01L43/08;H01L43/12;H01L27/22;H01L43/02 主分类号 H01L43/08
代理机构 代理人
主权项 1. A semiconductor structure, comprising: a magnetic region over a substrate, the magnetic region comprising a precursor magnetic material comprising a diffusive species; and a trap region comprising at least one attracter species comprising at least one trap site, the at least one attracter species formulated to exhibit a higher chemical affinity for the diffusive species of the precursor magnetic material than a chemical affinity between the diffusive species and another species of the precursor magnetic material.
地址 Boise ID US