| 摘要 |
An infrared detecting device (Se) possible to improve SN ratio, which is provided with a semiconductor substrate (1), a diaphragm (2) set on the semiconductor substrate, a thermopile (4) formed on the diaphragm by arranging a plurality of thermocouples (13) composed of p-type polysilicon (10) and n-type polysilicon (11) in a row and electrically connecting them each other in series, and a heat absorption film (5) formed on the central portion through an insulation layer (3), and sectional areas of the p-type and n-type polysilicons between hot (15) and cold (14) junctions of each of the thermocouples are made different from each other. <IMAGE> <IMAGE> <IMAGE> |
