PHYSICALLY UNCLONABLE FUNCTION BASED ON RESISTIVITY OF MAGNETORESISTIVE RANDOM-ACCESS MEMORY MAGNETIC TUNNEL JUNCTIONS
摘要
One feature pertains to least one physically unclonable function based on an array of magnetoresistive random-access memory (MRAM) cells. A challenge to the array of MRAM cells may identify some of the cells to be used for the physically unclonable function. Each MRAM cell may include a plurality of magnetic tunnel junctions (MTJs), where the MTJs may exhibit distinct resistances due to manufacturing or fabrication variations. A response to the challenge may be obtained for each cell by using the resistance(s) of one or both of the MTJs for a cell to obtain a value that serves as the response for that cell. The responses for a plurality of cells may be at least partially mapped to provide a unique identifier for the array. The responses generated from the array of cells may serve as a physically unclonable function that may be used to uniquely identify an electronic device.
申请公布号
EP3044793(A1)
申请公布日期
2016.07.20
申请号
EP20140766353
申请日期
2014.09.04
申请人
QUALCOMM INCORPORATED
发明人
ZHU, XIAOCHUN;MILLENDORF, STEVEN, M.;GUO, XU;JACOBSON, DAVID, M.;LEE, KANGHO;KANG, SEUNG, H.;NOWAK, MATTHEW MICHAEL