发明名称 Organic thin film transistor with siloxane polymer interface
摘要 Provided is an organic thin film transistor comprising a siloxane polymeric layer interposed between a gate dielectric and an organic semiconductor layer. An integrated circuit comprising thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.
申请公布号 US6617609(B2) 申请公布日期 2003.09.09
申请号 US20010012655 申请日期 2001.11.05
申请人 3M INNOVATIVE PROPERTIES COMPANY 发明人 KELLEY TOMMIE W.;BOARDMAN LARRY D.;DUNBAR TIMOTHY D.;JONES TODD D.;MUYRES DAWN V.;PELLERITE MARK J.;SMITH TERRANCE P.
分类号 H01L51/05;H01L21/312;H01L21/316;H01L29/786;H01L51/00;H01L51/30;H01L51/40;(IPC1-7):H01L51/00 主分类号 H01L51/05
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