| 摘要 |
To suppress undesired scattered light and leaking light so as to improve the optical function and reliability. In this DMD, as the address circuit of one cell, SRAM 12 is formed monolithically on the principal surface of silicon substrate 10, and, on said SRAM 12, reflective digital optical switch or optical modulating element 16 is formed monolithically as one cell made of three layers of a metal, such as aluminum, via oxide film 14. Each reflective optical modulating element 16 has bias bus 18 and yoke address electrodes 20, 22 as the first metal layer, torsional hinge 24, hinge supporting portions 26, 28, yoke 30, and mirror address electrodes 32, 34 as the second metal layer, and mirror 36 as the third metal layer. Optical absorptive and nonconductive film 40 is formed to cover a portion or all of the first metal layer and to cover underlying film (insulating film) 14. In addition, said film 40 is formed to bury hole formed on the surface of the third metal layer.
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