Method for predicting temperature and test wafer for use in temperature prediction

摘要

A test wafer for use in temperature prediction is prepared. The test wafer includes: first semiconductor layer formed in a crystalline state; second semiconductor layer formed in an amorphous state on the first semiconductor layer; and passivation film formed over the second semiconductor layer. Next, the test wafer is loaded into a device fabrication system and then heated therein at a predetermined period of time. Thereafter, a recovery rate, at which part of the second semiconductor layer recovers from the amorphous state to the crystalline state at the interface with the first semiconductor layer, is calculated. Then, a temperature of the test wafer that has been heated is measured according to a relationship between the recovery rate and a temperature corresponding to the recovery rate.