发明名称 |
Low power tunneling metal-oxide-semiconductor (MOS) device |
摘要 |
A three terminal tunneling device that has a smaller voltage transition between off-current and on-current states and which also has less dependence on the lateral dimensions of the device. The device is a hybrid between a MOS transistor, a gated diode and a tunneling diode. The semiconductor device includes a lightly doped substrate of a first conductivity type. The lightly doped substrate will include a first heavily doped region of a first conductivity type formed in the substrate and a lightly doped layer of a first conductivity type disposed on the substrate and the first heavily doped region. The device also including a gate insulator layer disposed on the lightly doped layer and underlying a portion of the first heavily doped region and a gate electrode that is disposed on the gate insulator layer. Additionally, the device will include a second heavily doped region of a first conductivity formed in the substrate extending into the first heavily doped region of a first conductivity and a heavily doped region of a second conductivity formed in the substrate extending into the lightly doped substrate and spatially isolated from the first heavily doped region.
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申请公布号 |
US6617643(B1) |
申请公布日期 |
2003.09.09 |
申请号 |
US20020185338 |
申请日期 |
2002.06.28 |
申请人 |
MCNC |
发明人 |
GOODWIN-JOHANSSON SCOTT H. |
分类号 |
H01L29/739;H01L29/88;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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