| 摘要 |
There is disclosed a method of producing a single crystal by Czochralski method comprising contacting a seed crystal with a melt in a crucible, and then pulling it slowly to grow a single crystal ingot characterized in that a pulling condition is controlled according to time of use of a heater surrounding said crucible. The pulling condition to be controlled is at least one of relative position of a heater and a crucible, number of rotation of a crucible, number of rotation of a crystal, an atmosphere pressure in a furnace and a gas volume of flowing There are provided a method of producing a silicon single crystal by CZ method wherein a dispersion of impurity concentration in the crystal can be reduced, and to produce a single crystal stably. |
