| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of a large area, high performance and high productivity and a method of manufacturing the same. SOLUTION: In the method of manufacturing the semiconductor device by performing exposure dividedly to a plurality, the alignment of a plurality of the second and subsequent masks is performed and the divided exposure is performed by using marks for alignment formed by simultaneous exposure with the first sheet of the mask. The marks for alignment are rugged patterns of metallic films as represented by Al, Cr, Al-Nd, and Cu or Si, SiO<SB>2</SB>and SiN films. With the semiconductor device to be subjected to the exposure dividedly to a plurality, the divided exposure is performed by aligning a plurality of the second and subsequent masks using the marks for alignment formed by the simultaneous exposure with the first sheet of the mask. COPYRIGHT: (C)2003,JPO |
