发明名称 |
CIRCUIT WITH MAKE-LINK FUSE AND SEMICONDUCTOR DEVICE UTILIZING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To ensure the operation reliability of a circuit by cutting off a current flowing through a make-link fuse. SOLUTION: The circuit with make-link fuses is composed of a transistor P3 having a drain and a source, a first make-link fuse F3 connected between the gate of the transistor P3 and a first voltage node and a second make-link fuse F4 connected between the gate of the transistor P3 and a second voltage node. This cuts off the current flowing through the make-link fuses F3, F4 and ensures the operation reliability. This circuit is also available, when make- link fuses exist in the form of a box in a semiconductor device redundancy circuit. COPYRIGHT: (C)2003,JPO
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申请公布号 |
JP2003249551(A) |
申请公布日期 |
2003.09.05 |
申请号 |
JP20020309740 |
申请日期 |
2002.10.24 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
LEE WON-SEOK;MOON YOUNG-KUG;RYU DONG-RYUL |
分类号 |
H01L21/82;G11C17/18;G11C29/00;(IPC1-7):H01L21/82 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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