发明名称 PHOTOELECTRIC TRANSDUCER
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a photoelectric transducer of high reliability at low cost. <P>SOLUTION: In this photoelectric transducer, a large number of granular crystal semiconductors exhibiting a conductivity type are arranged on a substrate having one electrode layer and bonded to the substrate. Parts between the semiconductors are filled with insulator, a semiconductor layer exhibiting an opposite conductivity type is arranged on the semiconductors, and the other electrode is connected with the semiconductor layer exhibiting the opposite conductivity type. The granular crystal semiconductors are composed of silicon. The insulator is formed of paste of glass composition powder for low temperature backing. Ratio of particles whose diameter is at most 1μm is at least 5% of the whole grain diameter distribution, and ratio of particles whose diameter is at least 5μm is at least 20% of the whole grain diameter distribution. The insulator is glass composition whose coefficient of thermal expansion at 40-400°C is 40-80×10<SP>-7</SP>/°C. As a result, the insulator with which the parts between the granular crystal semiconductors are filled and which prevents generation of defects such as cracks, foaming and abnormal deposit and have stable reliability can be formed, and the photoelectric transducer of high reliability can be provided. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003249668(A) 申请公布日期 2003.09.05
申请号 JP20020048664 申请日期 2002.02.25
申请人 KYOCERA CORP 发明人 SEKI YOUJI;KYODA TAKESHI;FUKUDA JUN;ARIMUNE HISAO
分类号 H01L31/04;(IPC1-7):H01L31/04 主分类号 H01L31/04
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