| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor element having a planarization structure in which surface level difference occurring in the fabrication process of the semiconductor element is improved. <P>SOLUTION: Following to coating an insulation film formed on a transistor element with a photosensitive film, patterning is performed to expose the contact part. Subsequently, the insulation film is removed from the contact part to form a region for depositing a metal, and an electrode metal is deposited before the photosensitive film is removed in a lift-off process. <P>COPYRIGHT: (C)2003,JPO</p> |
