| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride compound semiconductor laser device with a satisfactory heat resistance characteristic and long life and to provide a manufacturing method. SOLUTION: The rate of a length in a laser resonator length direction on a part just above or just below a current injection region to an active layer in a chip face which is brought into contact with a fixing solder layer to a mount member and a part covered with a dielectric film extending from a resonator end face in the part is set to be not more than 20%. At the time of manufacturing, bar-like chip stock material individual laser diode chips after division are made and the chip stock materials are sandwiched by a bar-like jig. The end parts of the chip stock materials including faces being the resonator end faces of the laser diode chips protrude much more than parts which are brought into contact with the chip stock materials in the end parts of the jig. Then, the dielectric film is disposed in the faces becoming the resonator end faces. COPYRIGHT: (C)2003,JPO
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