发明名称 SUBSTRATE TREATING APPARATUS
摘要 PROBLEM TO BE SOLVED: To properly execute a heat treatment by properly measuring actual temperature. SOLUTION: A hot wall type heat treatment apparatus 10 comprises a process tube 11 for accommodating a boat 21 for holding a plurality of wafers 1 in a treatment chamber 14, heater sections 32a to 32d laid outside the process tube 11, and a heat insulation tank 31 surrounding the outside of the group of the heater sections. In the hot wall type heat treatment apparatus 10, heater thermocouples 34a to 34b for measuring a temperature in the vicinity of the heater sections 32a to 32d are inserted into a gap between the process tube 11 and the heater section from a lower end opening of the heat insulation tank 31. Since it can be suppressed that a temperature detection section of the heater thermocouple is cooled through heat conduction, the heater thermocouple can accurately measure an actual heating temperature of the heater section to properly feed-back control the heater section. Further, since heat dissipation from the treatment chamber through an insertion hole of the heater thermocouple can be suppressed, temperature distribution in the treatment chamber along a horizontal cross section in the same can be prevented from being deteriorated. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003249456(A) 申请公布日期 2003.09.05
申请号 JP20020047794 申请日期 2002.02.25
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 MURATA HITOSHI;UENO MASAAKI
分类号 H01L21/22;H01L21/205;H01L21/324;(IPC1-7):H01L21/22 主分类号 H01L21/22
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