发明名称 METHOD FOR ORGANIC BOTTOM ANTIREFLECTIVE COATING AND PHOTORESIST TRIMMING PROCESS
摘要 PROBLEM TO BE SOLVED: To provide a method for etching an organic bottom antireflective coating (OBARC) and a photoresist material in a single etching process. SOLUTION: The method comprises the steps of etching the OBARC and trimming the photoresist material at the same time in an etching environment using a substantially isotropic etching operation. The etching environment includes an etching chamber with a top electrode and a bottom electrode wherein a mixture of abrasive gases can flow therethrough. Using an endpoint detection test, it is determined when an exposed portion of OBARC has been removed. The exposed portion of OBARC is an area of OBARC without photoresist protection and exposed to the etching environment. An overetch step is applied to trim the photoresist to a desired dimension. The time of the overetch step is based on the percentage of an endpoint time and the process condition of the overetch step is same as that of the endpoint step. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003249485(A) 申请公布日期 2003.09.05
申请号 JP20020327984 申请日期 2002.11.12
申请人 CHARTERED SEMICONDUCTOR MFG LTD 发明人 RAMACHANDRAMURTHY PRADEEP YELEHANKA;LOONG LOH WEI;YU JIE;QING CHEN TONG
分类号 H01L21/3065;G03F7/40;H01L21/027;H01L21/311;(IPC1-7):H01L21/306 主分类号 H01L21/3065
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