发明名称 PROCESS OF PRODUCING MULTICRYSTALLINE SILICON SUBSTRATE AND SOLAR CELL
摘要 <p>There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.</p>
申请公布号 WO03073441(A1) 申请公布日期 2003.09.04
申请号 WO2003JP01914 申请日期 2003.02.21
申请人 CANON KABUSHIKI KAISHA;MIZUTANI, MASAKI;ISHIHARA, SHUNICHI;NAKAGAWA, KATSUMI;SATO, HIROSHI;YOSHINO, TAKEHITO;NISHIDA, SHOJI;UKIYO, NORITAKA;IWANE, MASAAKI;IWASAKI, YUKIKO 发明人 MIZUTANI, MASAKI;ISHIHARA, SHUNICHI;NAKAGAWA, KATSUMI;SATO, HIROSHI;YOSHINO, TAKEHITO;NISHIDA, SHOJI;UKIYO, NORITAKA;IWANE, MASAAKI;IWASAKI, YUKIKO
分类号 C01B33/02;C30B11/00;C30B29/06;C30B33/00;H01L21/208;H01L31/04;H01L31/068;H01L31/18;(IPC1-7):H01B33/02 主分类号 C01B33/02
代理机构 代理人
主权项
地址