发明名称 Method for manufacturing semiconductor device
摘要 The manufacturing method of the semiconductor device provides reduction of the photoresist film distortion occurred in a development procedure and, as a result, makes measurement of the place difference of the photoresist mask correct. The manufacturing method of the semiconductor device to be published are those the photoresist film consisting the upper alignment-measuring mark is placed more than about 200 mum from an corner in device forming region formed adjoining scribing region, along with X-direction which is the measurement direction in scribing region formed on semiconductor substrate.
申请公布号 US2003164353(A1) 申请公布日期 2003.09.04
申请号 US20030376234 申请日期 2003.03.03
申请人 NEC ELECTRONICS CORPORATION 发明人 TSUBATA KYOICHI
分类号 H01L21/027;G03F7/20;G03F9/00;H01L23/544;(IPC1-7):C23F1/00;H01L21/00 主分类号 H01L21/027
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