Drive method for MOS-gate controlled power semiconductor devices, by driving with gate current that limits rate of rise of collector current, and then increasing

摘要

When the power semiconductor device (IGBT) turns on, it is first driven by the drive circuit with a gate current that limits the rate of rise of collector current (di/dt) to an allowable value. The gate current is increased to a predetermined value after the rate of rise has fallen to a set value. The rate of rise of current is determined from a measurement of the current passing between the emitter of the power semiconductor device and an auxiliary emitter.