发明名称 |
Fabrication of ultra-shallow channels for microfluidic devices and systems |
摘要 |
<p>A method for etching an ultra-shallow channel includes using an etch process that is selective for one material to etch a different material in order to achieve a very precise channel depth in the different material. Channels as shallow as 10 nm can be fabricated in silicon with precision of 5 nm or better using the method. Stepped channels can be fabricated where each segment is a different depth, with the segments being between 10 nm and 1000 nm in depth. The method is applied to create a fluidic channel which includes a channel substrate to which is bonded a lid substrate to confine fluids to the fluidic channels so fabricated.</p> |
申请公布号 |
AU2003216254(A8) |
申请公布日期 |
2003.09.04 |
申请号 |
AU20030216254 |
申请日期 |
2003.02.12 |
申请人 |
KIONIX, INC. |
发明人 |
JAMES E. MOON;LINCOLN C. YOUNG |
分类号 |
B01F5/06;B01F13/00;B01J19/00;B01L3/00;B81B1/00;B81C1/00;G01N30/60;(IPC1-7):B81C1/00 |
主分类号 |
B01F5/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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