发明名称 |
METHOD OF FORMING LAYERS OF OXIDE OF DIFFERENT THICKNESSES ON A SURFACE OF A SUBSTRATE |
摘要 |
A method of forming oxide layers of different thickness on a substrate (1) is disclosed, wherein the oxide layers preferably serve as gate insulation layers of field effect transistors. The method allows to form very thin, high quality oxide layers with a reduced number of masking steps compared to the conventional processing, wherein the thickness difference can be maintained within a range of some tenths of a nanometer. The method substantially eliminates any high temperature oxidations and is also compatible with most chemical vapor deposition techniques used for gate dielectric deposition in sophisticated semiconductor devices
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申请公布号 |
WO03073491(A1) |
申请公布日期 |
2003.09.04 |
申请号 |
WO2002US40807 |
申请日期 |
2002.12.20 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WIECZOREK, KARSTEN;GRAETSCH, FALK;KRUEGEL, STEPHAN |
分类号 |
H01L21/28;H01L21/8234;H01L21/8238;H01L27/088;H01L27/092;H01L29/51;(IPC1-7):H01L21/311;H01L21/314;H01L21/318;H01L21/823 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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