METHOD FOR FABRICATING VIA HOLE USING SEMICONDUCTOR DRY ETCHING APPARATUS

摘要

PURPOSE: A method for fabricating a via hole using a semiconductor dry etching apparatus is provided to easily form a good via hole on an aluminum metal layer by using a dry etcher including an electrode made of a silicon material. CONSTITUTION: A process chamber(10) including the first electrode of a silicon material and the second electrode of an aluminum material maintains an inner pressure of 550-650 milliTorr. A wafer(16) in which an aluminum layer and a photoresist pattern for forming the via hole have been formed is inserted into the process chamber. Reaction gas composed of Ar gas of 75-85 SCCM, CF4 gas of 55-65 SCCM, CHF3 gas of 20-28 SCCM and N2 gas of 55-65 SCCM is supplied to the inside of the process chamber. Radio frequency(RF) power is applied to the first or second electrode.