Semiconductor device manufacturing method

摘要

The present invention relates to a semiconductor device manufacturing method having an etching step of an electrode material film (15, 17) constituting a capacitor using ferroelectric substance or high-dielectric substance, etching of a conductive film (15, 17) that acts as an electrode (15a, 17a) of the capacitor formed over a semiconductor substrate (1) is carried out in an atmosphere containing bromine, and a heating temperature of the semiconductor substrate (1) is set in a range of 300 °C to 600 °C, otherwise etching of at least the conductive film (15, 17) is carried out in an atmosphere to which only hydrogen bromide and oxygen are supplied from an outside.