METHOD FOR FABRICATING CONTACT OF SEMICONDUCTOR DEVICE AND STRUCTURE THEREOF

摘要

PURPOSE: A method for fabricating a contact of a semiconductor device is provided to prevent malfunction of the semiconductor device by forming a contact exposing a source/drain such that the area of the contact in contact with a source/drain region increases. CONSTITUTION: The first interlayer dielectric is formed in a contact hole formation region on a semiconductor substrate(10) in which a plurality of gate structures(12) including a source/drain are formed. The second interlayer dielectric(32) is formed on the entire surface of the semiconductor substrate including the first interlayer dielectric. A photolithography process is performed on the second interlayer dielectric to form a contact hole penetrating the second interlayer dielectric. The first interlayer dielectric under the contact hole penetrating the second interlayer dielectric is wet-etched through a photolithography process to form a contact hole broader than that of the contact hole penetrating the second interlayer dielectric such that the source/drain can be contacted through the broad contact. A conductive layer is formed in the contact hole.