发明名称 |
Semiconductor device and liquid jet apparatus using the same |
摘要 |
A semiconductor device having a high source breakdown voltage and high performance and high reliability and a liquid jet apparatus are provided. In a semiconductor device having a switching element for flowing current through a load and a circuit for driving the switching element, respectively formed on the same substrate, the circuit has a source follower transistor for generating a drive voltage to be applied to a control electrode of the switching element, and the source region of the source follower transistor has a first doped region connected to the source electrode and a second doped region having an impurity concentration lower than that of the first doped region, the second doped region forming a pn junction with a semiconductor region forming a channel.
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申请公布号 |
EP1341233(A2) |
申请公布日期 |
2003.09.03 |
申请号 |
EP20030003746 |
申请日期 |
2003.02.19 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
KOZUKA, HIRAKU;IKETA, OSAMU;SHIMOTSUSA, MINEO;MORII, TAKASHI |
分类号 |
B41J2/05;H01L27/088;H01L21/8234;H01L27/092;(IPC1-7):H01L27/088;H01L21/823 |
主分类号 |
B41J2/05 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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