| 摘要 |
<p>An exposure mask for an EUV(Extreme UltraViolet) light source and a manufacturing method thereof are provided to improve a contrast ratio by restraining the scattered reflection of an exposure source. An exposure mask for an EUV light source includes a reflective layer, a first absorbing pattern and a second absorbing pattern. The reflective layer(21) is formed on a semiconductor substrate. The first absorbing pattern(23) is formed on the reflective layer. The second absorbing pattern(27a) is formed at both sides of the first absorbing pattern like a spacer type structure. The first absorbing pattern is made of one selected from a group consisting of Cr, Ti and TiN. The reflective layer is made of one selected from a group consisting of Mo/Si, Mo/Be and MoRu/Be. The second absorbing pattern is made of one selected from a group consisting of Ti, TiN and Cr.</p> |
