发明名称 |
Nonvolatile semiconductor memory cell and method for fabricating the memory cell |
摘要 |
A nonvolatile semiconductor memory cell includes a transistor component formed on a substrate and a storage node that determines the switching state of the transistor component. The storage node is arranged near a control gate electrode. The storage node has a group of vertically oriented column structures having at least two semiconductor layer zones and an insulating layer zone situated between the two semiconductor layer zones.
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申请公布号 |
US6614069(B2) |
申请公布日期 |
2003.09.02 |
申请号 |
US20020054440 |
申请日期 |
2002.01.22 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
ROESNER WOLFGANG;SCHULZ THOMAS;RISCH LOTHAR;RAMCKE TIES |
分类号 |
H01L21/28;H01L29/788;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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