发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device. The device includes a bit line, a memory cell coupled to the bit line a word line coupled to the memory cell. A first time between the receiving of a read command for a read operation in order to read data from the memory cell and the beginning of read operation is different from a second time between the receiving of a write command for a write operation in order to write data to the memory cell and the beginning of the write operation.
|
申请公布号 |
US6615309(B2) |
申请公布日期 |
2003.09.02 |
申请号 |
US20030337977 |
申请日期 |
2003.01.08 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TSUCHIDA KENJI;TODA HARUKI;KUYAMA HITOSHI |
分类号 |
G11C11/407;G11C7/10;G11C7/22;G11C16/02;(IPC1-7):G06F12/02 |
主分类号 |
G11C11/407 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|