发明名称 Semiconductor memory device
摘要 A semiconductor memory device. The device includes a bit line, a memory cell coupled to the bit line a word line coupled to the memory cell. A first time between the receiving of a read command for a read operation in order to read data from the memory cell and the beginning of read operation is different from a second time between the receiving of a write command for a write operation in order to write data to the memory cell and the beginning of the write operation.
申请公布号 US6615309(B2) 申请公布日期 2003.09.02
申请号 US20030337977 申请日期 2003.01.08
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TSUCHIDA KENJI;TODA HARUKI;KUYAMA HITOSHI
分类号 G11C11/407;G11C7/10;G11C7/22;G11C16/02;(IPC1-7):G06F12/02 主分类号 G11C11/407
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