发明名称 |
High-performance MOS transistor of LDD structure having a gate insulating film with a nitride central portion and oxide end portions |
摘要 |
A Metal Oxide Semiconductor (MOS) transistor includes a gate insulating film disposed on a surface of a silicon substrate. The gate insulating film has a central portion formed on the silicon substrate and comprising a nitride insulating film, and an end portion located on each side of the central portion, the end portion being thicker than the central portion and formed of an oxide insulating film. The MOS transistor also includes a p-type gate electrode formed on the gate insulating film, sidewalls formed on both sides of the gate insulating film and the gate electrode, a pair of p-type source/drain areas formed in surface portions of the silicon substrate, and a channel area located between the pair of source/drain areas.
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申请公布号 |
US6614081(B2) |
申请公布日期 |
2003.09.02 |
申请号 |
US20010824672 |
申请日期 |
2001.04.04 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
MAKABE MARIKO;KOYAMA SHIN;ANDO KOICHI |
分类号 |
H01L21/283;H01L21/28;H01L21/336;H01L29/423;H01L29/43;H01L29/49;H01L29/51;H01L29/78;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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