发明名称 Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes
摘要 An electrically conductive mask having openings formed is located above a semiconductor substrate and ions are implanted into the surface of the semiconductor substrate through the electrically conductive mask, thereby forming ion implanted layers. For ion implantation under different conditions, a dedicated electrically conductive mask is used with each ion implantation step.
申请公布号 US6614033(B2) 申请公布日期 2003.09.02
申请号 US20010002296 申请日期 2001.12.05
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SUGURO KYOICHI;MURAKOSHI ATSUSHI;OKUMURA KATSUYA
分类号 H01J37/317;(IPC1-7):H01J37/317;G03F9/00 主分类号 H01J37/317
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