发明名称 |
Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes |
摘要 |
An electrically conductive mask having openings formed is located above a semiconductor substrate and ions are implanted into the surface of the semiconductor substrate through the electrically conductive mask, thereby forming ion implanted layers. For ion implantation under different conditions, a dedicated electrically conductive mask is used with each ion implantation step.
|
申请公布号 |
US6614033(B2) |
申请公布日期 |
2003.09.02 |
申请号 |
US20010002296 |
申请日期 |
2001.12.05 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SUGURO KYOICHI;MURAKOSHI ATSUSHI;OKUMURA KATSUYA |
分类号 |
H01J37/317;(IPC1-7):H01J37/317;G03F9/00 |
主分类号 |
H01J37/317 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|