| 发明名称 |
VERTICAL JUNCTION FIELD EFFECT SEMICONDUCTOR DIODES |
| 摘要 |
Semiconductor diodes are diode connected vertical cylindrical field effect devices having one diode terminal as the common connection between a gate and a source/drain of the vertical cylindrical field effect devices. Methods of forming the diode connected vertical cylindrical field effect devices are disclosed. |
| 申请公布号 |
KR20030070894(A) |
申请公布日期 |
2003.09.02 |
| 申请号 |
KR20037006440 |
申请日期 |
2003.05.12 |
| 申请人 |
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发明人 |
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| 分类号 |
H01L29/861;H01L21/308;H01L21/329;H01L21/337;H01L21/8234;H01L27/02;H01L29/808 |
主分类号 |
H01L29/861 |
| 代理机构 |
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代理人 |
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