| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to reduce the resistance of a diffusion layer and make the interconnection of the diffusion layer by forming a salicide layer on the diffusion layer and the sidewall of a trench while using a silicon-on-insulator(SOI) wafer. CONSTITUTION: A gate oxide layer, a polysilicon layer and a salicide blocking layer are deposited on the SOI substrate(2) and are patterned to form a gate electrode. An ion implantation process for forming a lightly-doped-drain(LDD) diffusion layer is performed on the SOI substrate including the gate electrode. A nitride layer is deposited on the ion-implanted SOI substrate to form a spacer insulation layer. Ions for forming a diffusion layer are implanted into the SOI substrate including the spacer insulation layer and a heat treatment process is performed. A trench insulation layer for trench insulation is formed on the heat-treated SOI substrate. A salicide layer(14) is formed on the SOI substrate including the trench insulation layer. An insulation layer(16) is deposited and planarized on the SOI substrate having the salicide layer. A metal interconnection is deposited on the planarized SOI substrate.
|
