| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method of reclaiming a semiconductor wafer capable of reclaiming the semiconductor wafer of good quality to a used wafer in which crystal defects such as COPs (crystal originated particles) exist. SOLUTION: The surface of a used silicon wafer is polished in a step S1. The used silicon wafer is immersed in a mixed acid comprising at least two or more kinds of acids in a step S2. Surface treatment is performed to smooth the surface of the used silicon wafer in a step S3. Continuously, high-temperature annealing is performed in a step S4 to finally obtain a reclaimed wafer. As the high-temperature annealing, there are first annealing treatment for 30 to 60 minutes in an argon atmosphere at a high temperature of 1,200°C or higher or a second annealing treatment for 30 to 60 minutes in a hydrogen atmosphere at a high temperature of 1,200°C or higher or the like. COPYRIGHT: (C)2003,JPO
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