| 摘要 |
<P>PROBLEM TO BE SOLVED: To ensure smooth giving and receiving of electrons for heightening the transducing efficiency of a photoelectric transducing device. <P>SOLUTION: The manufacturing method according to the invention is for the photoelectric transducing device having a p-type charge conveying layer, an n-type charge conveying layer formed on a base board, and a light absorbing layer between the p-type and n-type charge conveying layers, wherein the n-type charge conveying layer is formed through electrodeposition with an electrolyte containing zinc ions and at least one sort of oxide semiconductors. <P>COPYRIGHT: (C)2003,JPO |
