| 摘要 |
PROBLEM TO BE SOLVED: To reduce the variation of a threshold voltage by suppressing the variation of interface state density in each crystal orientation face. SOLUTION: A non-crystalline Si film is formed on a quartz substrate 1 having an insulating surface, and is subjected to first heat treatment (N<SB>2</SB>atmosphere, temperature 600°C, 15 hours) to be crystallized to form a polycrystalline Si film 3. A gate-oxide film 4 is formed on the polycrystalline Si film 3 at 400°C which is lower than a first heat treatment temperature of 600°C. At least an active region (channel region) of a polycrystalline Si-TFT is formed in the polycrystalline film 3, which is a lower layer underneath the gate oxide film 4. COPYRIGHT: (C)2003,JPO
|
