发明名称 CHIP TYPE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a thermal stress impingement plate, a chip type semiconductor device in which the strength of soldering with an external electrode is secured by stabilizing the bonding of a heat impingement plate by an Al-Si alloy, and a manufacturing method therefor. <P>SOLUTION: On one side of the thermal stress impingement plate like W or Mo, a laminate film composed of a Ti film is formed on the first layer thereof and a laminate film composed of an Ni film is formed on the second layer thereof. Then, on the opposite side, an Al film or an Al-Si alloy film is formed on the first layer thereof and a laminate film composed of an Ag film is formed on the second layer thereof respectively by electron vacuum deposition or sputtering. In such a structure, in the manufacturing method, the semiconductor device formed with the Al film or the Al-Si alloy film and the thermal stress impingement plate are bonded through an Al-Si alloy plate to a main electrode. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003243585(A) 申请公布日期 2003.08.29
申请号 JP20020038123 申请日期 2002.02.15
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 OKAMOTO KEIJO
分类号 H01L23/40;H01L23/36;H01L23/48;(IPC1-7):H01L23/36 主分类号 H01L23/40
代理机构 代理人
主权项
地址