| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a stencil mask of high precision and long life, together with its manufacturing method, where no warp occurs under radiation of an electron beam. <P>SOLUTION: A stencil mask 10 for electron beam comprises a plurality of drawing openings 24 formed after a conductive film 20 is formed on a silicon film 18 of an SOI wafer 12. The plurality drawing openings 24 are formed at the conductive film 20 while the openings similar in shape but larger than the plurality of drawing openings 24 are formed on the silicon film 18. A silicon layer 14 and a silicon oxide film 16 of the SOI wafer 12 in a drawing region are removed in sash form. <P>COPYRIGHT: (C)2003,JPO</p> |
