| 摘要 |
PROBLEM TO BE SOLVED: To improve the dielectric strength of a Schottky diode. SOLUTION: The diode 1 of the present invention is characterized in that: distances (b) between long sides of thin-groove withstand voltage parts 25<SB>1</SB>to 25<SB>3</SB>and a ring inner circumference of an intermediate withstand voltage part 28 are double as long as distances (b) between short sides and the ring inner circumference of the intermediate withstand voltage part 28; the distance (c) between the ring inner circumference of an outer withstand voltage part 27<SB>1</SB>at the innermost circumference and the ring outer circumference of the intermediate withstand voltage part 28 and the distance (u) between the long sides of mutually adjacent thin groove withstand voltage parts 25<SB>1</SB>to 25<SB>3</SB>are both equalized to the distance (a); and ring widths (2) between the outer withstand voltage parts 27<SB>1</SB>to 27<SB>2</SB>and the intermediate withstand voltage part 28 and widths (y) of the respective thin groove withstand voltage parts 25<SB>1</SB>to 25<SB>3</SB>are equalized to each other. Consequently, the part inside the outer withstand voltage part 27<SB>2</SB>at the outermost circumference is all in a depletion state and an electric field never locally concentrated on the part positioned inside the outer withstand voltage part 27<SB>2</SB>at the outermost circumference, so the withstand voltage is improved as compared with a conventional element. COPYRIGHT: (C)2003,JPO |
