| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device having a high gate/drain breakdown voltage and at the same time a small amount of leakage current in a gate electrode. SOLUTION: The semiconductor device comprises a substrate 1, an updoped GaN buffer layer 2 formed on the substrate 1, an undoped AlGaN barrier layer 3 formed on the buffer layer 2, a first-conductivity-type AlGaN electron transit layer 4 formed on the barrier layer 3, a stripe-like groove formed in the electron transit layer 4, a gate electrode 6 formed on an undoped AlN gate electrode buffer layer 7 formed along the groove in the stripe-like groove and the gate electrode buffer layer 7, and source and drain electrodes 5 formed in parallel with the stripe-like groove each on respective electron transit layers 4 outside the stripe-like groove. COPYRIGHT: (C)2003,JPO
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