| 摘要 |
PROBLEM TO BE SOLVED: To form an SiN film on a silicon wafer of large area without causing any damage on the silicon wafer through a simple arrangement using a convenient method. SOLUTION: The system 21 for nitriding a silicon wafer comprises a processing container 24 for containing the silicon wafer 22 in the inner space 23, a means 25 for supplying NH<SB>3</SB>gas to the inner space 23, a means 27 for heating the silicon wafer 22, and a means 28 for irradiating UV-rays toward the inner space 23. In the nitriding system 21, NH<SB>3</SB>gas is dissociated with the exciting energy of the UV-rays and caused to react on the silicon wafer 22 thus forming an SiN film usable as an insulation film on the surface of the silicon wafer 22. COPYRIGHT: (C)2003,JPO
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