SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To improve an emission intensity by a semiconductor light emitting element of the structure in which electrodes for applying a bias to a light emitting semiconductor layer are formed at the same surface side of a supporting substrate and to prevent a power from being lost.

SOLUTION: A first conductivity type first contact layer 2 is laminated on the support substrate 1. The light emitting semiconductor layer 3 having a light emitting junction part 33 formed in a boundary between a first conductivity type clad 31 and a second conductivity type clad 32 on the layer 2. A second conductivity type second contact layer 4 is laminated on the layer 3. An exposure region of the surface is formed adjacent to the layer 3 on the layer 2, and a first electrode 5 of a substantially one character state opposed to the layer 3 is formed on the region 21. A second electrode 6 having a bar-like electrode piece 61 substantially equal to a distance between the distal ends of a plurality of the first electrodes 5 separated at a substantially equal interval in a direction approaching from a remote position to the electrode 5 and the electrode 5 are formed on the layer 4.

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