| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a self-scanning light emitting element array formed on an Si substrate using Si as a structural material. <P>SOLUTION: A lattice mismatch relaxation layer 32 is formed on an Si substrate 30. An n-type AlGaAs layer 14, a p-type AlGaAs layer 16, an n-type AlGaAs layer 18, and a p-type AlGaAs layer 20 are formed sequentially on the lattice mismatch relaxation layer 32 by epitaxial growth. An anode electrode 22 is provided on the AlGaAs layer 20, a gate electrode 24 is provided on the AlGaAs layer 18, and a cathode electrode 26 is provided on the rear surface of a GaAs substrate. <P>COPYRIGHT: (C)2003,JPO |
