| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a highly reliable, high output light emitting diode by suppressing emission at a deep level thereby increasing emission quantity and suppressing diffusion of Zn from a p-type clad layer to a p-type active layer. <P>SOLUTION: In a light emitting diode having an n-type clad layer 3, a p-type active layer 4, a p-type clad layer 5, and a p-type current diffusion layer 6 formed on an n-type semiconductor substrate 1, the p-type active layer 4 is added with Zn at a concentration in the range of 1×10<SP>16</SP>cm<SP>-3</SP>-5×10<SP>17</SP>cm<SP>-3</SP>, and an undoped spacer layer 9 having film thickness of 300 nm or above is provided between the p-type active layer 4 and the p-type clad layer 5. <P>COPYRIGHT: (C)2003,JPO |
