| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor integrated circuit apparatus for forming an interlayer film for memory whose quality is excellent and film thickness is thin in a non-volatile memory, and for forming an insulating film for capacitor whose film thickness is thicker than the interlayer film for memory. SOLUTION: In a memory region A, a floating gate 5A is formed on a p-type Si substrate 1 via a tunnel oxide film 4. At the same time, in an analog circuit region B, a lower electrode 5B is formed on an STI film 3. Then, a thermal oxide film 10 is formed on the p-type Si substrate 1 including the floating gate 5A and the lower electrode 5B. The thermal oxide film 10 on the memory region A is removed, and an ONO film 6A is formed on the floating gate 5A. On the other hand, in an analog circuit region B, an ONO film 6B is formed on the thermal oxide film 10. COPYRIGHT: (C)2003,JPO
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