| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for removing residual contaminants after unnecessary matters deposited in the reaction chamber or on the fixture of a film deposition system in the field of semiconductor are cleaned off using COF<SB>2</SB>gas. SOLUTION: In the method for removing residual contaminants in the reaction chamber of a film deposition system after the reaction chamber is cleaned using COF<SB>2</SB>gas, a compound gas containing hydrogen is employed in gas cleaning, plasma cleaning or remote plasma cleaning. The compound gas containing hydrogen is H<SB>2</SB>, SiH<SB>4</SB>, NH<SB>3</SB>, or SiH<SB>2</SB>Cl<SB>2</SB>. COPYRIGHT: (C)2003,JPO
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