发明名称 |
Method of depositing low K films |
摘要 |
A silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.
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申请公布号 |
US2003162410(A1) |
申请公布日期 |
2003.08.28 |
申请号 |
US20030375852 |
申请日期 |
2003.02.25 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
HUANG TZU-FANG;LU YUNG-CHENG;XIA LI-QUN;YIEH ELLIE;YAU WAI-FAN;CHEUNG DAVID W.;WILLECKE RALF B.;LIU KUOWEI;LEE JU-HYUNG;MOGHADAM FARHAD K.;MA YEMING JIM |
分类号 |
C23C16/04;C23C16/40;H01L21/316;H01L21/469;H01L21/768;H01L23/522;(IPC1-7):H01L21/31 |
主分类号 |
C23C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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