| 摘要 |
A method for fabricating Al-Si contained alloy line, which is adapted to form a conductive line on a substrate, is described. A first conductive layer, a second conductive layer and an Al-Si contained alloy layer are sequentially formed on the substrate. Then, the substrate temperature is rapidly lowered to between about 0° C. and 25° C. in about 1 second to 10 seconds. A patterned photo-resister layer is formed on the third conductive layer. The patterned photo-resister layer is used as a mask, and the third conductive layer, the Al-Si contained alloy layer, the second conductive layer and the first conductive layer are etched to form the conductive line.
|
