发明名称 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND COMMUNICATION METHOD
摘要 A channel region (2), a source region (3) and a drain region (4) are formed on a polycrystalline semiconductor layer (1). The characteristic of a polycrystalline TFT (101) is dispersed by the amount of crystal grain boundaries (6) contained in the channel region (2). A drain current is reduced as the amount of the crystal grain boundaries (6) contained in the channel region (2) is increased. In order to utilize a code obtained by encoding the electric characteristic of the TFT (101) for identification of a semiconductor chip, a system or the like, the TFT (101) is mounted on the semiconductor chip, the system or the like along with an encoder circuit. Thus, a barrier against illegal use of a user terminal is improved at a low cost.
申请公布号 US2003160715(A1) 申请公布日期 2003.08.28
申请号 US19990457721 申请日期 1999.12.10
申请人 MAEDA SHIGENOBU;IPPOSHI TAKASHI;KURIYAMA HIROTADA;HONDA HIROKI 发明人 MAEDA SHIGENOBU;IPPOSHI TAKASHI;KURIYAMA HIROTADA;HONDA HIROKI
分类号 H01L21/822;H01L21/20;H01L21/336;H01L21/8246;H01L23/58;H01L27/04;H01L27/112;H01L29/786;H04L9/32;H04M1/665;H04M1/67;H04W12/12;(IPC1-7):H03M1/66 主分类号 H01L21/822
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